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| DC COMPONENTS CO., LTD. R 2SD880 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) TO-220AB .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) 123 .350(8.90) .330(8.38) .640 Typ (16.25) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Rating 60 60 7 3 0.5 1.5 30 +150 -55 to +150 Unit V V V A A W W o o .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICBO IEBO VCE(sat) VBE(on) hFE fT 380s, Duty Cycle 2% Min 60 60 60 - Typ 3 Max 0.1 0.1 1 1 300 - Unit V V mA mA V V MHz Test Conditions IC=1mA, IE=0 IC=50mA, IB=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=3A, IB=0.3A IC=0.5A, VCE=5V IC=0.5A, VCE=5V IC=0.5A, VCE=5V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain (1) Transition Frequency (1)Pulse Test: Pulse Width Classification of hFE Rank Range O 60~120 Y 100~200 GR 150~300 |
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